item drain-source voltage gate-source voltage total power dissipation storage temperature channel temperature symbol v ds v gs 4.0 -3.0 290 -65 to +175 -65 to +150 175 150 fhx35lg FHX35LP fhx35lg FHX35LP v v mw ? c ? c ? c ? c p t* t stg t ch unit rating absolute maximum rating (ambient temperature ta=25 ? c) *note: mounted on al 2 o 3 board (30 x 30 x 0.65mm) fujitsu recommends the following conditions for the reliable operation of gaas fets: 1. the drain-source operating voltage (v ds ) should not exceed 3 volts. 2. the forward and reverse gate currents should not exceed 0.2 and -0.075 ma respectively with gate resistance of 4000 w . 3. the operating channel temperature (t ch ) should not exceed 80 ? c. item saturated drain current transconductance pinch-off voltage gate source breakdown voltage noise figure associated gain symbol i dss 15 40 85 40 60 - -0.2 - -1.0 -2.0 1.2 1.6 -3.0 -- 8.5 10.0 - v ds = 2v, i ds = 1ma v ds = 3v, i ds = 10ma f = 12ghz v ds = 2v, i ds = 10ma v ds = 2v, v gs = 0v i gs = -10 a ma ms v db db v g m v p v gso nf g as test conditions unit limit typ. max. min. electrical characteristics (ambient temperature ta=25 ? c) note: rf parameters for lg/lp devices are measured on a sample basis as follows: lot qty. sample qty. accept/reject 1200 or less 125 (0,1) 1201 to 3200 200 (0,1) 3201 to 10000 315 (1,2) 10001 or over 500 (1,2) available case styles: lg/lp channel to case thermal resistance - 220 300 ? c/w r th features ?low noise figure: 1.2b (typ.)@f=12ghz ?high associated gain: 10.0db (typ.)@f=12ghz ?lg 2 0.25 m, wg = 280 m ?gold gate metallization for high reliability ?cost effective ceramic microstrip (smt) package description the fhx35lg/lp is a high electron mobility transistor(hemt) intended for general purpose, low noise and high gain amplifiers in the 2-18ghz frequency range. this device is packaged in cost effective, low parasitic, hermetically sealed(lg) or epoxy-sealed(lp) metal-ceramic packages for high volume telecommunication, dbs, tvro, vsat or other low noise applications. fujitsu s stringent quality assurance program assures the highest reliability and consistent performance. 1 edition 1.1 july 1999 fhx35lg/lp super low noise hemt
2 fhx35lg/lp super low noise hemt power derating curve drain current vs. drain-source voltage 100 50 150 200 250 300 0 0 50 100 150 lp lg 200 1 0 2 3 ambient temperature ( ? c) drain-source voltage (v) total power dissipation (mw) 30 40 50 20 10 drain current (ma) v gs =0v -0.2v -0.6v -0.8v -1.0v -0.4v
3 fhx35lg/lp super low noise hemt gas output power vs. input power f=12ghz v ds =3v i ds =15ma -5 0 5 10 input power (dbm) 15 25 10 5 output power (dbm) associated gain (db) nf & gas vs. temperature f=12ghz v ds =3v i ds =10ma 100 200 0 300 400 ambient temperature ( ? k) 2.0 1.5 1.0 15 10 5 noise figure (db) nf & gas vs. i ds f=12ghz v ds =3v v ds =3v i ds =10ma 12 10 8 7 9 11 10 20 30 drain current (ma) noise figure (db) associated gain (db) nf & gas vs. frequency 2 1 3 2 1 3 0 10 5 15 20 0 4 6 8 10 12 20 18 frequency (ghz) noise figure (db) associated gain (db) nf gas gas nf nf
4 f = 12 ghz v ds = 2v i ds = 10ma g opt = 0.56 e 175 ? rn/50 = 0.08 nfmin = 1.2db typical noise figure circle +j250 +j100 +j50 +j25 +j10 0 -j10 -j25 -j100 -j250 g opt 2.0 2.5 3.0 1.5 20 15 10 5 0 20 15 10 5 0 4 6 8 10 12 20 v ds = 3v i ds = 15ma ga(max) frequency (ghz) ga(max) and |s 21 | 2 vs. frequency fhx35lg gain (db) |s 21 | 2 noise parameters fhx35lg v ds = 3v, i ds = 10ma freq. (ghz) g opt (mag) (ang) nfmin (db) rn/50 2 4 6 8 10 12 14 16 18 0.81 0.74 0.69 0.64 0.60 0.56 0.53 0.50 0.48 32 63 93 127 148 175 -162 -139 -117 0.40 0.50 0.68 0.86 1.03 1.20 1.38 1.54 1.70 0.58 0.42 0.30 0.20 0.12 0.08 0.08 0.10 0.14 noise parameters FHX35LP v ds = 3v, i ds = 10ma freq. (ghz) g opt (mag) (ang) nfmin (db) rn/50 2 4 6 8 10 12 14 16 18 0.85 0.76 0.69 0.62 0.55 0.50 0.45 0.42 0.39 30 55 81 109 138 168 -160 -126 -92 0.40 0.50 0.68 0.86 1.03 1.20 1.38 1.54 1.70 0.29 0.26 0.19 0.12 0.06 0.04 0.06 0.13 0.22 fhx35lg/lp super low noise hemt
5 +j250 +j100 +j50 +j25 +j10 0 -j10 -j25 -j50 -j100 -j250 s 11 s 22 180 ? +90 ? 0 ? -90 ? s 21 s 12 scale for |s 21 | scale for |s 12 | .04 .08 .12 .16 2 1 3 4 4 8 4 12 8 12 0.1 ghz 0.1 ghz 20 ghz 20 ghz 20 ghz 20 ghz 12 12 8 8 4 4 100 25 50 w 0.1ghz 0.1 ghz s-p arameters fhx35lg v ds = 3v , i ds = 10ma frequency s1 1 s21 s12 s22 (mhz) mag ang mag ang mag ang mag ang 100 .996 -3.5 4.576 177.2 .002 81.2 .516 -2.5 500 .994 -12.1 4.548 169.0 .012 79.3 .517 -10.2 1000 .982 -23.5 4.471 158.5 .023 73.1 .513 -19.9 2000 .950 -44.7 4.304 139.3 .043 57.9 .498 -38.0 3000 .912 -64.6 4.026 121.0 .059 44.6 .483 -54.9 4000 .867 -84.0 3.742 103.1 .071 31.8 .462 -71.9 5000 .821 -101.6 3.436 86.6 .079 20.0 .446 -87.6 6000 .783 -1 17.5 3.132 71.6 .085 9.8 .439 -102.2 7000 .757 -130.9 2.881 57.9 .087 0.9 .441 -1 15.3 8000 .738 -142.8 2.659 45.0 .088 -7.1 .452 -126.7 9000 .726 -153.8 2.497 32.4 .090 -15.3 .468 -136.9 10000 .707 -164.5 2.347 20.2 .092 -21.7 .480 -146.1 1 1000 .680 -174.1 2.206 8.4 .090 -27.8 .494 -156.0 12000 .654 176.1 2.101 -3.4 .090 -35.5 .503 -164.8 13000 .638 166.0 2.035 -15.1 .091 -42.6 .514 -173.8 14000 .626 157.1 2.003 -26.2 .093 -49.6 .537 178.4 15000 .607 147.8 1.975 -37.6 .094 -55.8 .559 171.0 16000 .565 138.4 1.917 -50.1 .097 -64.7 .564 162.7 17000 .528 127.2 1.924 -62.9 .102 -73.3 .567 154.4 18000 .484 1 12.8 1.966 -77.1 .109 -86.2 .572 142.7 19000 .421 93.5 1.932 -91.7 .1 16 -96.2 .581 133.1 20000 .380 74.2 1.991 -107.4 .127 -1 10.9 .547 124.3 fhx35lg/lp super low noise hemt
6 s-p arameters FHX35LP v ds = 3v , i ds = 10ma frequency s1 1 s21 s12 s22 (mhz) mag ang mag ang mag ang mag ang 1000 .987 -20.9 4.008 159.2 .024 75.4 .591 -15.5 2000 .956 -40.5 3.889 141.7 .045 61.0 .569 -30.7 3000 .907 -59.7 3.704 125.0 .063 47.6 .536 -45.5 4000 .855 -78.5 3.504 108.2 .079 35.5 .503 -59.6 5000 .801 -96.6 3.279 91.4 .091 23.4 .467 -72.8 6000 .749 -1 13.7 3.044 76.0 .098 13.4 .434 -87.0 7000 .707 -129.7 2.822 61.3 .103 3.8 .417 -100.7 8000 .670 -143.9 2.607 48.9 .107 -4.6 .41 1 -1 13.3 9000 .639 -156.6 2.422 36.6 .109 -12.4 .41 1 -124.4 10000 .612 -169.4 2.300 24.2 .1 13 -19.5 .410 -134.5 1 1000 .580 178.0 2.168 1 1.6 .1 15 -26.7 .407 -145.3 12000 .561 165.0 2.061 -0.3 .1 17 -33.9 .409 -157.7 13000 .533 153.0 1.949 -12.0 .1 19 -40.6 .424 -167.7 14000 .519 141.9 1.884 -22.6 .122 -46.6 .440 -177.2 15000 .501 128.9 1.841 -34.1 .127 -55.3 .463 174.7 16000 .486 1 15.0 1.834 -47.7 .133 -63.1 .469 166.1 17000 .462 98.5 1.765 -60.8 .139 -73.4 .478 155.5 18000 .439 83.6 1.704 -74.4 .144 -83.3 .489 145.4 fhx35lg/lp super low noise hemt
7 for further information please contact: fujitsu compound semiconductor, inc. 2355 zanker rd. san jose, ca 95131-1 138, u.s.a. phone: (408) 232-9500 f ax: (408) 428-91 1 1 www .fcsi.fujitsu.com fujitsu microelectronics, ltd. compound semiconductor division network house norreys drive maidenhead, berkshire sl6 4fj phone:+44 (0)1628 504800 f ax:+44 (0)1628 504888 fujitsu limited reserves the right to change products and specifications without notice. the information does not convey any license under rights of fujitsu limited or others. 1998 fujitsu compound semiconduct or, inc. printed in u.s.a. fcsi0598m200 fujitsu compound semiconductor products contain gallium arsenide (gaas) which can be hazardous to the human body and the environment. for safety, observe the following procedures: caution ?do not put these products into the mouth. ?do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. ?observe government laws and company regulations when discarding this product. this product must be discarded in accordance with methods specified by applicable hazardous waste procedures. 0.5 (0.02) 1.0 (0.039) 1.3 max (0.051) 0.1 (0.004) 1.5 0.3 (0.059) 1.78 0.15 (0.07) 1.5 0.3 (0.059) 4.78 0.5 case style "lg/lp" metal-ceramic hermetic package unit: mm(inches) 1. gate 2. source 3. drain 4. source 1.5 0.3 (0.059) 1.78 0.15 (0.07) 1.5 0.3 (0.059) 4.78 0.5 gold plated leads 1 2 3 4 fhx35lg/lp super low noise hemt
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